| PART |
Description |
Maker |
| 2SC1741AS 2SD1484 2SD1484K A5800323 2SC3359S 2SC33 |
50V,0.5A medium power transistor
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Medium Power Transistor (50V, 0.5A)
From old datasheet system
Medium Power Transistor (50V/ 0.5A)
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 300MA I(C) | SPAK
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | SPAK
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 50V五（巴西）总裁| 500mA的一（c）| SPAK
|
Rohm
|
| DCP53-16 |
Medium Power Bipolar Transistors
|
Diodes, Inc.
|
| 2SA1759 A5800340 2SC4620 2SC4505 2SA1759T100P |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
From old datasheet system
High-Voltage Switching Transistor (Camera strobes and Telephone, Power supply) (-400V, -0.1A)
High-Coltage Switching Transistor
|
ROHM
|
| AT-42086 AT-42086-BLK AT-42086-TR1 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| AT-42035 AT-42035G |
Up to 6 GHz Medium Power Silicon Bipolar Transistor
|
AVAGO TECHNOLOGIES LIMITED
|
| 2SB1183 2SB1239 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Darlington connection for high DC current gain.
|
ROHM[Rohm]
|
| SMDJ100A SMDJ110A SMDJ130A SMDJ120A SMDJ150 SMDJ17 |
100.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
110.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
130.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
120.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
150.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
170.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
160.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| 2SD2391T100Q 2SB1561 2SD2391 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
BJT
|
ROHM
|
| RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
| SST4403 2N4403 MMST4403 UMT4403 A5800339 |
PNP Medium Power Transistor (Switching)(PNP中等功率晶体开) 进步党中功率晶体管（开关）（民进党中等功率晶体管（开关）
From old datasheet system
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
|
Rohm Co., Ltd.
ROHM[Rohm]
|
| 2SA1812 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
ROHM
|
